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Single layer h-BN (Boron Nitride) film grown on copper foil: 2" x 1"



Single layer h-BN (Boron Nitride) film grown in copper foil.
Ordering Code: CVD-2X1-BN

h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).

During Chemical Vapor Deposition, BN is grown on both sides of the copper foil

 

Specifications:

  • Close to complete coverage (90-95%), with some minor holes
  • Thickness of the copper foil is 20 microns
  • High crystalline quality, see SAD (Selected area [electron] diffraction) data
  • Quality is confirmed by TEM. TEM shows perfect hexagonal structure.


TEM SEM

TEM image of perfect

hexagonal structure

On SEM image, BN is

seen as wrinkles on

top of the copper foil.



SAD Wavelength

Absorbance data BN on copper

SAD data of h-BN   

If transferred onto an SiO2 substrate,

the BN film may be seen as a white film.

However, it is difficult to recognize the

BN film on copper using a microscope.



Transfer: PMMA Procedure, similar to that of graphene. It may be transferred on most substrates, which we may do in-house as custom work.

Odering Code: CVD-2X1-BN

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