Multilayer h-BN (Boron Nitride) film grown on copper foil: 2" x 1"
Multilayer h-BN (Boron Nitride) film grown on copper foil: 2" x 1"
Ordering Code: SKU-CVD-2X1-BN-ML
h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).
During Chemical Vapor Deposition, BN is grown on both sides of the copper foil
Specifications:
- Close to complete coverage (90-95%), with some minor holes
- Average Thickness of BN film is 13 nm
- Thickness of the copper foil is 20 microns
- Quality is confirmed by TEM. TEM shows perfect hexagonal structure.
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TEM image of perfect hexagonal structure |
AFM image of multilayer BN on Cu |
AFM scan of multilayer BN on Cu |
If transferred onto an SiO2 substrate, the BN film may be seen as a white film. However, it is difficult to recognize the BN film on copper using a microscope.
Transfer: PMMA Procedure, similar to that of graphene. It may be transferred on most substrates, which we may do in-house as custom work.
Academic References:
- Ki Kang Kim, et. al. Synthesis and Characterization of Hexagonal Boron Nitride Film as a Dielectric Layer for Graphene Devices, ACS Nano, 2012, 6 (10), pp 8583–8590
Multilayer h-BN (Boron Nitride) film grown on copper foil: 2" x 1"
Ordering Code: SKU-CVD-2X1-BN-ML
