Monolayer Graphene on 285 nm SiO2 Wafer: 5 pack
Monolayer Graphene on 285 nm SiO2 Wafer: 5 pack
Ordering Code: 1ML-SIO2-5P
A five pack of monolayer graphene on 1cm x 1cm silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating.
Properties of Graphene Film:
- The thickness and quality of our graphene films is controlled by Raman Spectroscopy
- The graphene coverage of this product is about 95%
- The graphene film is continuous, with occasional holes and cracks
- The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation
- Sheet Resistance: 660-1,500 Ω/□
Raman Spectrum of Single-Layer Graphene on SiO2
Our graphene films are predominantly single-layer graphene (more than 97%) with occasional small multilayer islands.
Properties of Silicon/Silicon Dioxide Wafers:
- Oxide Thickness: 285 nm
- Color: Violet
- Wafer thickness: 525 micron
- Resistivity: 0.001-0.005 ohm-cm
- Type/Dopant: P/Boron
- Orientation: <100>
- Front Surface: Polished
- Back Surface: Etched
Applications:
- Graphene electronics and transistors
- Conductive coatings
- Aerospace industry applications
- Support for metallic catalysts
- Microactuators
- MEMS and NEMS
- Chemical and biosensors
- Multifunctional materials based on graphene
- Graphene Research
Our graphene films are manufactured using a PMMA assisted transfer method. Please refer to the references below for more details.
Optical Image of Single-Layer Graphene
Academic References / Read More
Graphene Growth
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 5 June 2009: Vol. 324. no. 5932, pp. 1312 - 1314
Graphene Transfer
- Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Li et.al., Nano Lett., 2009, 9 (12), pp 4359–4363
- Toward Clean and Crackless Transfer of Graphene Liang et.al.,ACS Nano, 2011, 5 (11), pp 9144–9153
Monolayer Graphene on 285 nm SiO2 Wafer: 5 pack
Ordering Code: 1ML-SIO2-5P
