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Monolayer Graphene on 90 nm SiO2 Wafer: 5 pack



Mono Layer 5 Pack

Monolayer Graphene on 90 nm SiO2 Wafer: 5 pack
Ordering Code:
 1ML-90NM-SIO2-5P

A 5 pack of monolayer graphene on 1cm x 1cm silicon wafers with 90 nanometer silicon dioxide coating.

Properties of Graphene Film:

  • The thickness and quality of our graphene films is controlled by Raman Spectroscopy
  • The graphene coverage of this product is about 95%
  • The graphene film is continuous, with occasional holes and cracks
  • The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation
  • Sheet Resistance: 660-1,500 Ω/□


Raman Spec

Raman Spectrum of Single-Layer Graphene on SiO2

Our graphene films are predominantly single-layer graphene (more than 97%) with occasional small multilayer islands.

Properties of Silicon/Silicon Dioxide Wafers:

  • Oxide Thickness: 90 nm
  • Color: Violet
  • Wafer thickness: 525 micron
  • Resistivity: 0.001-0.005 ohm-cm
  • Type/Dopant: P/Boron
  • Orientation: <100>
  • Front Surface: Polished
  • Back Surface: Etched

Applications:

  • Graphene electronics and transistors
  • Conductive coatings
  • Aerospace industry applications
  • Support for metallic catalysts
  • Microactuators
  • MEMS and NEMS
  • Chemical and biosensors
  • Multifunctional materials based on graphene
  • Graphene Research

Our graphene films are manufactured using a PMMA assisted transfer method. Please refer to the references below for more details.


Optical Image

Optical Image of Single-Layer Graphene


Academic References / Read More

Graphene Growth

  1. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 5 June 2009: Vol. 324. no. 5932, pp. 1312 - 1314

Graphene Transfer

  1. Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Li et.al., Nano Lett., 2009, 9 (12), pp 4359–4363
  2. Toward Clean and Crackless Transfer of Graphene Liang et.al.,ACS Nano, 2011, 5 (11), pp 9144–9153

Ordering Code: 1ML-90NM-SIO2-5P



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